View MRF8P20160HR3_133785.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DataSheet.in
Freescale Semiconductor Technical Data
Document Number: MRF8P2160H Rev. 1, 7/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 16.5 16.6 16.5 D (%) 44.8 45.3 45.8 Output PAR (dB) 7.0 6.9 6.9 ACPR (dBc) --29.8 --30.1 --30.6
MRF8P20160HR3 MRF8P20160HSR3
1880-2025 MHz, 37 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 3 dB Compression Point 160 Watts CW 2025 MHz * Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 2025 MHz Gps (dB) 15.3 D (%) 44.0 Output PAR (dB) 6.8 ACPR (dBc) --30.0
CASE 465M-01, STYLE 1 NI-780-4 MRF8P20160HR3
CASE 465H-02, STYLE 1 NI-780S-4 MRF8P20160HSR3
Features * Production Tested in a Symmetrical Doherty Configuration * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Symbol VDSS VGS VDD Tstg TC TJ
Value --0.5, +65 --6.0, +10 32, +0 -- 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8P20160HR3 MRF8P20160HSR3 1
RF Device Data Freescale Semiconductor
DataSheet.in
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1900 MHz Symbol RJC Value (1,2) 0.75 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics (3) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (3) Gate Threshold Voltage (VDS = 10 Vdc, ID = 116 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 550 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VGS(th) VGS(Q) VDS(on) 1.2 1.9 0.1 1.8 2.7 0.27 2.7 3.4 0.5 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (4,5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Gps D PAR ACPR 15.5 43.5 6.4 -- 16.5 45.8 6.9 --30.6 18.5 -- -- --28.5 dB % dB dBc
Typical Broadband Performance (5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 16.5 16.6 16.5 D (%) 44.8 45.3 45.8 Output PAR (dB) 7.0 6.9 6.9 ACPR (dBc) --29.8 --30.1 --30.6
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Each side of device measured separately. 4. Part internally matched both on input and output. 5. Measurement made with device in a Symmetrical Doherty configuration. (continued)
MRF8P20160HR3 MRF8P20160HSR3 2 RF Device Data Freescale Semiconductor
DataSheet.in
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performance (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, 1880--1920 MHz Bandwidth Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point, CW IMD Symmetry @ 40 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 37 W Avg. Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) P1dB P3dB IMDsym -- -- -- 107 160 13 -- -- -- W W MHz
VBWres GF G P1dB
-- -- -- --
50 0.2 0.01 0.009
-- -- -- --
MHz dB dB/C dB/C
Typical Broadband Performance -- 2025 MHz (1) (In Freescale 2025 Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 2025 MHz 1. Measurement made with device in a Symmetrical Doherty configuration. Gps (dB) 15.3 D (%) 44.0 Output PAR (dB) 6.8 ACPR (dBc) --30.0
MRF8P20160HR3 MRF8P20160HSR3 RF Device Data Freescale Semiconductor 3
DataSheet.in
VGA C10 C8 C20 C22 VDA C18 C16 CUT OUT AREA C C14 C15 P C12 C26 C24
R2 C6
C3 Z1 C1 R1 C2
C5
C13 C17
C4
R3 C7 C11 VGB
C19 VDB MRF8P20160H Rev. 1 C25
C9
C21 C23
Figure 2. MRF8P20160HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8P20160HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C2, C12, C13 C3 C4, C5 C6, C7, C18, C19 C8, C9, C20, C21, C22, C23 C10, C11 C14, C15 C16, C17 C24, C25 C26 R1 R2, R3 Z1 PCB Description 10 pF Chip Capacitors 0.3 pF Chip Capacitor 1.1 pF Chip Capacitors 12 pF Chip Capacitors 10 F, 50 V Chip Capacitors 22 F, 35 V Tantalum Capacitors 2.0 pF Chip Capacitors 2.2 pF Chip Capacitors 220 F, 50 V Electrolytic Capacitors 0.8 pF Chip Capacitor 50 , 4 W Chip Resistor 8.25 , 1/4 W Chip Resistors 1900 MHz Band 90, 3 dB Chip Hybrid Coupler 0.020, r = 3.5 Part Number ATC600F100JT250XT ATC600F0R3BT250XT ATC600F1R1BT250XT ATC600F120JT250XT GRM55DR61H106KA88L T491X226K035AT ATC600F2R0BT250XT ATC600F2R2BT250XT 227CKS505M ATC600F0R8BT250XT CW12010T0050GBK CRCW12068R25FKEA GCS351--HYB1900 RO4350B Manufacturer ATC ATC ATC ATC Murata Kemet ATC ATC Illinois Cap ATC ATC Vishay Soshin Rogers
MRF8P20160HR3 MRF8P20160HSR3 4 RF Device Data Freescale Semiconductor
DataSheet.in
Single--ended

4 4
Quadrature combined
4
Doherty
2
2
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P20160HR3 MRF8P20160HSR3 RF Device Data Freescale Semiconductor 5
DataSheet.in
TYPICAL CHARACTERISTICS
48 47 46 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF PARC IRL ACPR 1875 1900 1925 1950 1975 2000 2025 Gps 45 --28 --29 ACPR (dBc) --30 --31 --32 --33 2050 D, DRAIN EFFICIENCY (%) 18 V = 28 Vdc, P = 37 W (Avg.), IDQA = 550 mA 17.5 VDD = 1.6 Vdc, out Single--Carrier W--CDMA GSB 17 Gps, POWER GAIN (dB) 16.5 16 15.5 15 14.5 14 13.5 13 1850 49 D
IRL, INPUT RETURN LOSS (dB)
--10 --13 --16 --19 --22 --25
--2.5 --3 --3.5 --4 --4.5 --5 PARC (dB)
f, FREQUENCY (MHz)
Figure 4. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 37 Watts Avg.
--20 IM3--U --30 IM3--L --40 --50 IM5--U IM5--L IM7--L
IMD, INTERMODULATION DISTORTION (dBc)
IM7--U --60 VDD = 28 Vdc, Pout = 40 W (PEP) IDQA = 550 mA, VGSB = 1.6 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1900 MHz --70 1 10 TWO--TONE SPACING (MHz)
100
Figure 5. Intermodulation Distortion Products versus Two-Tone Spacing
18 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 17 Gps, POWER GAIN (dB) 16 15 14 13 12 0 --1 dB = 16 W --1 --2 --3 --3 dB = 36 W --4 --5 --6 VDD = 28 Vdc, IDQA = 550 mA VGSB = 1.6 Vdc, f = 1900 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) 20 10 PARC 100 0 Gps ACPR 60 D, DRAIN EFFICIENCY (%) 50 40 30 0 --10 --20 --30 --40 --50 --60 ACPR (dBc)
D
--2 dB = 26 W
Figure 6. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power
MRF8P20160HR3 MRF8P20160HSR3 6 RF Device Data Freescale Semiconductor
DataSheet.in
TYPICAL CHARACTERISTICS
18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 1 VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 1920 MHz 1900 MHz 1880 MHz 1920 MHz 1880 MHz 1900 MHz Gps 10 0 300 D 60 50 D, DRAIN EFFICIENCY (%) 40 30 20 0 --10 --20 --30 --40 --50 --60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6
ACPR
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 Pout, OUTPUT POWER (WATTS) AVG. 100
Figure 7. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
18 15 12 GAIN (dB) 9 6 3 0 1660 IRL Gain 0 --7 --14 --21 VDD = 28 Vdc Pin = 0 dBm IDQA = 550 mA VGSB = 1.6 Vdc 1720 1780 1840 1900 1960 2020 2080 --28 --35 --42 2140 IRL (dB) 3.84 MHz Channel BW 0
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal (dB) 0.1 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0 2 4 6 8 10 12 PEAK--TO--AVERAGE (dB) 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW
Figure 9. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal
Figure 10. Single-Carrier W-CDMA Spectrum MRF8P20160HR3 MRF8P20160HSR3 RF Device Data Freescale Semiconductor 7
DataSheet.in
VDD = 28 Vdc, IDQA = 550 mA f MHz 1880 1900 1920 Max Pout (1) Watts 98 98 97 dBm 49.9 49.9 49.9 Zsource 5.14 -- j9.41 7.59 -- j9.88 8.90 -- j9.65 Zload 1.56 -- j5.24 1.58 -- j5.37 1.57 -- j5.48
(1) Maximum output power measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Matching Network Device Under Test Output Matching Network
Z
source
Z
load
Figure 11. Maximum Output Power -- Doherty Load Pull Optimization for Carrier Side
VDD = 28 Vdc, IDQA = 550 mA f MHz 1880 1900 1920 Max Eff. (1) % 65.1 64.6 64.6 Zsource 5.14 -- j9.41 7.59 -- j9.88 8.90 -- j9.65 Zload 3.04 -- j3.65 4.13 -- j2.87 4.12 -- j3.15
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Matching Network Device Under Test Output Matching Network
Z
source
Z
load
Figure 12. Maximum Efficiency -- Doherty Load Pull Optimization for Carrier Side
MRF8P20160HR3 MRF8P20160HSR3 8 RF Device Data Freescale Semiconductor
DataSheet.in
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 47 46 45 26 27 28 29 30 31 32 33 34 35 36 37 1900 MHz 1900 MHz 1920 MHz 1880 MHz 1880 MHz 1920 MHz Actual Ideal
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 1880 1900 1920 P1dB Watts 103 104 104 dBm 50.1 50.2 50.2 122 120 118 P3dB Watts dBm 50.9 50.8 50.7
Test Impedances per Compression Level f (MHz) 1880 1900 1920 P1dB P1dB P1dB Zsource 5.14 -- j9.41 7.59 -- j9.88 8.90 -- j9.65 Zload 1.65 -- j5.46 1.67 -- j5.43 1.66 -- j5.50
Figure 13. Pulsed CW Output Power versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P20160HR3 MRF8P20160HSR3 RF Device Data Freescale Semiconductor 9
DataSheet.in
ALTERNATE CHARACTERIZATION -- 2025 MHz
VGA C10 C8 C20 C22 C24 VGA C18* C14 CUT OUT AREA C C12 C16 C15 C17 C13 P C19* R3 C7 C21 VGB C23 C25 MRF8P20160H Rev. 1 C27 C28 C26
R2 C6
C3 Z1 C1 C2 R1 C5
C4
C11 VGB * Stacked
C9
Figure 14. MRF8P20160HR3(HSR3) Test Circuit Component Layout -- 2025 MHz
Table 6. MRF8P20160HR3(HSR3) Test Circuit Component Designations and Values -- 2025 MHz
Part C1, C2, C6, C7, C12, C13, C20, C21 C3, C14, C15 C4, C5 C8, C9, C22, C23, C24, C25 C10, C11 C16, C17 C18, C19 C26, C27 C28 R1 R2, R3 Z1 PCB Description 15 pF Chip Capacitors 0.3 pF Chip Capacitors 2.4 pF Chip Capacitors 10 F, 50 V Chip Capacitors 22 F, 35 V Tantalum Capacitors 0.6 pF Chip Capacitors 1.1 pF Chip Capacitors 220 F, 50 V Electrolytic Capacitors 0.8 pF Chip Capacitors 50 , 4 W Chip Resistor 8.25 , 1/4 W Chip Resistors 1900 MHz Band 90, 3 dB Chip Hybrid Coupler 0.020, r = 3.5 Part Number ATC600F150JT250XT ATC600F0R3BT250XT ATC600F2R4BT250XT GRM55DR61H106KA88L T491X226K035AT ATC600F0R6BT250XT ATC600F1R1BT250XT 227CKS505M ATC600F0R8BT250XT CW12010T0050GBK CRCW12068R25FKEA GCS351--HYB1900 RO4350B Manufacturer ATC ATC ATC Murata Kemet ATC ATC Illinois Cap ATC ATC Vishay Soshin Rogers
MRF8P20160HR3 MRF8P20160HSR3 10 RF Device Data Freescale Semiconductor
DataSheet.in
TYPICAL CHARACTERISTICS -- 2025 MHz
D D, DRAIN EFFICIENCY (%) 15.7 15.6 V = 28 Vdc, P = 37 W (Avg.), I DD out DQA = 550 mA 15.5 VGSB = 1.6 Vdc, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal 15.4 PAR = 9.9 dB @ 0.01% Probability on CCDF 15.3 15.2 15.1 15 14.9 14.8 14.7 1995 2000 2005 2010 2015 ACPR 2020 2025 2030 PARC IRL 44 43 42 41 Gps 40 --29 --30 ACPR (dBc) --31 --32 --33 --34 2035
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
--16 --16.5 --17 --17.5 --18 --18.5
--2.5 --3 --3.5 --4 --4.5 --5 PARC (dB)
f, FREQUENCY (MHz)
Figure 15. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 20 Watts Avg.
17 60 D 50 D, DRAIN EFFICIENCY (%) 40 ACPR 30 20 2010 MHz 2025 MHz 10 Gps 100 0 300 --60 0 --10 --20 --30 --40 --50 ACPR (dBc)
VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel 16 Bandwidth 15 14 13 12 11 1 2010 MHz
Gps, POWER GAIN (dB)
2025 MHz
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 Pout, OUTPUT POWER (WATTS) AVG.
Figure 16. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
18 Gain 15 12 GAIN (dB) 9 6 3 0 1850 IRL VDD = 28 Vdc Pin = 0 dBm IDQA = 550 mA VGSB = 1.6 Vdc 1900 1950 2000 2050 2100 2150 --5 --10 --15 --20 --25 --30 2200 IRL (dB) 0
f, FREQUENCY (MHz)
Figure 17. Broadband Frequency Response
MRF8P20160HR3 MRF8P20160HSR3 RF Device Data Freescale Semiconductor 11
DataSheet.in
PACKAGE DIMENSIONS
MRF8P20160HR3 MRF8P20160HSR3 12 RF Device Data Freescale Semiconductor
DataSheet.in
MRF8P20160HR3 MRF8P20160HSR3 RF Device Data Freescale Semiconductor 13
DataSheet.in
MRF8P20160HR3 MRF8P20160HSR3 14 RF Device Data Freescale Semiconductor
DataSheet.in
MRF8P20160HR3 MRF8P20160HSR3 RF Device Data Freescale Semiconductor 15
DataSheet.in
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Apr. 2010 July 2010 * Initial Release of Data Sheet * Added part number MRF8P20160HR3 (NI--780--4), p. 1 * Corrected IDQ1A value from 554 to 550 mA in Thermal Characteristics table and changed thermal resistance value from 0.95 to 0.75C/W. Thermal value now reflects the use of the combined dissipated power from the carrier amplifier and peaking amplifier, p. 2 * Changed VDS(on) values from 0.05 to 0.1 Min, 0.11 to 0.27 Typ and 0.15 to 0.5 Max. Revised numbers reflect per side measurement versus previous combined measurements, p. 2 * Replaced Fig. 4, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 37 Watts Avg. to show a wider bandwidth capability, p. 6 * Replaced Fig. 15, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 20 Watts Avg. to show more detailed RF performance capability, p. 11 Description
MRF8P20160HR3 MRF8P20160HSR3 16 RF Device Data Freescale Semiconductor
DataSheet.in
How to Reach Us:
Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2010. All rights reserved.
MRF8P20160HR3 MRF8P20160HSR3
Document Number: RF Device Data MRF8P2160H Rev. 1, 7/2010 Freescale Semiconductor
17

▲Up To Search▲

Price & Availability of MRF8P20160HR3

	To Download MRF8P20160HR3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .